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Datasheet IRFB9N30A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFB9N30A | Power MOSFET(Vdss=300V/ Rds(on)=0.45ohm/ Id=9.3A) PD- 91832
IRFB9N30A
HEXFET® Power MOSFET
l l l l l
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements
D
VDSS = 300V
G S
RDS(on) = 0.45Ω ID = 9.3A
Description
Third Generation HEXFETs from International Rectifier provide the designer w |
 International Rectifier |
 |
| 1 | IRFB9N30APBF | Power MOSFET ( Transistor ) l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Fast Switching l Ease of Paraleing l Dynamic dv/dt Rated l Simple Drive Requirements
l Lead-Free
PD- 95350
IRFB9N30APbF
HEXFET® Power MOSFET
D
VDSS = 300V
RDS(on) = 0.45Ω
G
ID = 9.3A
S
Description
Third Generation HEXFETs from International |
International Rectifier |
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