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Datasheet IRFB4310 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRFB4310 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFB4310
FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.007Ω(Max)
Applications ·High Efficiency Synchronous Rectification |
 Inchange Semiconductor |
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| 3 | IRFB4310 | HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitan |
 International Rectifier |
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| 2 | IRFB4310PbF | Power MOSFET ( Transistor ) Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced bod |
International Rectifier |
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| 1 | IRFB4310ZPbF | Power MOSFET ( Transistor ) PD - 97115A
IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF
HEXFET® Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ru |
International Rectifier |
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