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Datasheet IRF9Z34N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | IRF9Z34N | Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) PD - 9.1485B
IRF9Z34N
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -55V
G S
RDS(on) = 0.10Ω ID = -19A
Fifth Generation HEXFETs from International Rectifier ut |
International Rectifier |
|
4 | IRF9Z34NL | Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) PD - 9.1525
IRF9Z34NS/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z34NS) l Low-profile through-hole (IRF9Z34NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -55V RDS(on) = 0.10Ω
G
ID = -19A
S
Fifth Gen |
International Rectifier |
|
3 | IRF9Z34NLPBF | Advanced Process Technology
PD- 95769
IRF9Z34NSPbF IRF9Z34NLPbF
Lead-Free
www.irf.com
1
04/25/05
IRF9Z34NS/LPbF
2
www.irf.com
IRF9Z34NS/LPbF
www.irf.com
3
IRF9Z34NS/LPbF
4
www.irf.com
IRF9Z34NS/LPbF
www.i |
International Rectifier |
|
2 | IRF9Z34NS | Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) PD - 9.1525
IRF9Z34NS/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z34NS) l Low-profile through-hole (IRF9Z34NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -55V RDS(on) = 0.10Ω
G
ID = -19A
S
Fifth Gen |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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