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Datasheet IRF9Z34 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
14 | IRF9Z34 | Power MOSFET ( Transistor ) |
International Rectifier |
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13 | IRF9Z34 | (IRF9Z30 / IRF9Z34) P-Channel Power MOSFETs |
Samsung Electronics |
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12 | IRF9Z34 | Power MOSFET ( Transistor ) Power MOSFET
IRF9Z34, SiHF9Z34
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 60 VGS = - 10 V
34 9.9 16 Single
0.14
S
TO-220AB
G
S D G
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Ra |
Vishay |
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11 | IRF9Z34L | Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) PD - 9.913A
IRF9Z34S/L
HEXFET® Power MOSFET
Advanced Process Technology l Surface Mount (IRF9Z34S) l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description
l
D
VDSS = -60V RDS(on) = 0.14Ω
G S
ID = -18A
Third Gener |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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