Datasheet IRF9956PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF9956PBF	HEXFET Power MOSFET PD - 95259 IRF9956PbF l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.10Ω 3 6 4 5 Top	International Rectifier

IRF9956 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF9956	Power MOSFET(Vdss=30V/ Rds(on)=0.10ohm) PD - 9.1559A PRELIMINARY l l l l l l IRF9956 HEXFET® Power MOSFET 8 Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 1 D1 D1 D2 D2 2 7 VDSS = 30V RDS(on) = 0.1	International Rectifier
IRF9956PBF	HEXFET Power MOSFET PD - 95259 IRF9956PbF l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.10	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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