Datasheet IRF9953PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF9953PBF	Power MOSFET ( Transistor ) PD - 95477 IRF9953PbF Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -30V	International Rectifier

IRF9953 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF9953PBF	Power MOSFET ( Transistor ) PD - 95477 IRF9953PbF Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D	International Rectifier
IRF9953	Power MOSFET(Vdss=-30V/ Rds(on)=0.25ohm) PD - 9.1560A PRELIMINARY l l l l l l IRF9953 HEXFET® Power MOSFET 8 7 Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 1 D1 D1 D2 D2 2 VDSS = -30V RDS(on) = 0.2	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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