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Datasheet IRF9952 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRF9952 | Power MOSFET(Vdss=+-30V) PD - 9.1561A
PRELIMINARY
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IRF9952
HEXFET® Power MOSFET
D1 D1 D2 D2
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated
S1 G1 S2 G2
N -C H A N N E L M O S F E T 1 8
N-Ch P-Ch VDSS 3 |
 International Rectifier |
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| 2 | IRF9952PBF | HEXFET Power MOSFET PD - 95135
IRF9952PbF
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Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 7
D1 D1 D2 D2
N-Ch P-Ch VDSS 30V -30V
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International Rectifier |
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| 1 | IRF9952QPBF | Power MOSFET ( Transistor ) PD - 96115
IRF9952QPbF
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Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 3 4 7
D1 D1 D2 |
International Rectifier |
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