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Datasheet IRF9520 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | IRF9520 | 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET IRF9520
Data Sheet July 1999 File Number
2281.3
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power |
 Intersil Corporation |
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| 6 | IRF9520N | Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) PD - 91521A
IRF9520N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
D
VDSS = -100V
G S
RDS(on) = 0.48Ω ID = -6.8A
Description
Fifth Generation HEXFETs from International Rectifier |
 International Rectifier |
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| 5 | IRF9520NL | Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) PD -91522A
IRF9520NS/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9520S) l Low-profile through-hole (IRF9520L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -100V RDS(on) = 0.48Ω
G
ID = -6.8A
S
Fifth Gene |
International Rectifier |
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| 4 | IRF9520NPBF | HEXFET POWER MOSFET
PD - 95411
IRF9520NPbF
l l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
D
VDSS = -100V RDS(on) = 0.48Ω
G S
ID = -6.8A
Description
Fifth Generation H |
International Rectifier |
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