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Datasheet IRF9230 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRF9230 | P-CHANNEL POWER MOSFET IRF9230
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
P–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY SEALED TO–3 METAL PACKAGE
1
20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.0 |
 Seme LAB |
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| 3 | IRF9230 | -5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs Semiconductor
IRF9230, IRF9231, IRF9232, IRF9233
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
Description
These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to with |
 Intersil Corporation |
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| 2 | IRF9230 | P-CHANNNEL TRANSISTORS PD-90548D
IRF9230
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
JANTX2N6806 JANTXV2N6806
THRU-HOLE -TO-204AE (TO-3)
REF:MIL-PRF-19500/562
200V, P-CHANNNEL
Product Summary
Part Number BVDSS IRF9230 -200V
RDS(on) 0.80 Ω
ID -6.5A
The HEXFET®technology is the key to International |
 International Rectifier |
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| 1 | IRF9230 | Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) TO-3 |
 New Jersey Semiconductor |
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