Datasheet IRF8910PBF-1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF8910PBF-1	Power MOSFET ( Transistor ) VDS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 20 13.4 18.3 7.4 10 V mΩ nC A Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification IRF8910PbF-1 HEXFET®	International Rectifier

IRF8910PB Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF8910PBF-1	Power MOSFET ( Transistor ) VDS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 20 13.4 18.3 7.4 10 V mΩ nC A Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification IRF	International Rectifier
IRF8910PBF	HEXFET Power MOSFET PD -95673 IRF8910PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l VDSS 20V 13.4m:@VGS = 10V 1 2 3 4 RDS(on) max ID 10A Lead-Free S1 G1 S2 G2 8 7 6 5 Benefits l Very Low RDS(on)	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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