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Datasheet IRF840S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | IRF840S | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRF840S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.638Ω (Typ.)
Absolute Maximum Ra |
Fairchild Semiconductor |
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4 | IRF840S | Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A) |
International Rectifier |
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3 | IRF840S | Power MOSFET ( Transistor ) Power MOSFET
IRF840S, SiHF840S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
63 9.3 32 Single
0.85
D2PAK (TO-263)
D
GD S
G
S N-Channel MOSFET
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-fre |
Vishay |
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2 | IRF840SPBF | HEXFET Power MOSFET PD-95136
IRF840SPbF
Lead-Free
D2Pak
www.irf.com
1
05/10/04
IRF840SPbF
2
www.irf.com
IRF840SPbF
www.irf.com
3
IRF840SPbF
4
www.irf.com
IRF840SPbF
www.irf.com
5
IRF840SPbF
6
www.irf.com
IRF840SPbF
www.irf.com
7
IRF840SPbF
D2Pak Package Outline
Dimensions |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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