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Datasheet IRF840LCL Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRF840LCL | Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A) PD- 93766
IRF840LCS IRF840LCL
HEXFET® Power MOSFET
l l l l l l
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated
D
VDSS = 500V
G S
RDS(on) = 0.85Ω ID = 8.0A
Description
This new |
 International Rectifier |
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| 2 | IRF840LCL | Power MOSFET ( Transistor ) IRF840LCS/LCL
Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A
D
N Channel
G Symbol S
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Drain to Source Breakdown Voltage Drain to Source Leakage Current
Gate to Source Leakage Curre |
 TRANSYS |
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| 1 | IRF840LCL | Power MOSFET ( Transistor ) IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
500 VGS = 10 V
39
Qgs (nC)
10
Qgd (nC)
19
Configuration
Single
0.85
I2PAK (TO-262)
D2PAK (TO-263)
D
G
DS G
D S
G
S N-Channel MOSFET
FEATURES • Halogen-f |
 Vishay |
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