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Datasheet IRF830 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 44 | IRF830 | N-CHANNEL MOSFET |
 BLUE ROCKET ELECTRONICS |
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| 43 | IRF830 | N-Channel Power MOSFET / Transistor SEMICONDUCTOR
IRF830 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (4.5A, 500Volts)
DESCRIPTION
The Nell IRF830 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the br |
 nELL |
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| 42 | IRF830 | N-Channel MOSFET Transistor MOSFET
IRF830
N-channel mosfet transistor
INCHANGE
Features
With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;I 1.gate 2.drain 3.source
D=4.5A
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
VDSS
Drain-source voltage (VGS=0)
VGS Gate-source voltage
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 Inchange Semiconductor |
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| 41 | IRF830 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement
IRF830
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
500V
RDS(ON)
1.5Ω
G ID 4.5A
S
Description
APEC MOSFET provide the power designer with the bes |
 Advanced Power Electronics |
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