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Datasheet IRF7530 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRF7530 | Power MOSFET(Vdss=20V/ Rds(on)=0.030ohm) PD-93760B
IRF7530
HEXFET® Power MOSFET
q q q q q q
Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel
S1 G1 S2 G2
1
8
D1 D1 D2 D2
2
7
VDSS = 20V RDS(on) = 0.030Ω
3
6
4
5
Description
New trench HEXFET |
 International Rectifier |
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| 1 | IRF7530PBF | Power MOSFET ( Transistor ) PD - 95243
IRF7530PbF
l Trench Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) lAvailable in Tape & Reel l Lead-Free
S1 G1 S2 G2
Description
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing tec |
International Rectifier |
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