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Datasheet IRF7509 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRF7509 | Power MOSFET(Vdss=+-30V) PD - 91270J
IRF7509
HEXFET® Power MOSFET
q q q q q q q
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching
S1 G1 S2 G2
N-C HANNE L M O S F E T 1 8
D1 D1 D2 D2
N-Ch
P-Ch
2
7
3
6
V |
 International Rectifier |
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| 2 | IRF7509PBF | Power MOSFET ( Transistor ) PD - 95397
IRF7509PbF
HEXFET® Power MOSFET
l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
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International Rectifier |
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| 1 | IRF7509PBF-1 | Power MOSFET ( Transistor ) VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
N-CH 30
0.11
7.8
2.7
P-CH -30
0.2
7.5
-2.0
V Ω nC A
IRF7509PbF-1
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
Top View
Micro8
Features Industry-standard pinout Micro-8 Pack |
International Rectifier |
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