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Datasheet IRF750 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 16 | IRF750 | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.)
Absolute Maximum Ratings
Symbo |
 Fairchild Semiconductor |
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| 15 | IRF7501 | Power MOSFET(Vdss=20V/ Rds(on)=0.135ohm) PD - 91265H PRELIMINARY
l l l l l l l
IRF7501
HEXFET® Power MOSFET
8 7
Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching
S1 G1 S2 G2
1
D1 D1 D2 D2
2
VDSS =20V RDS(on) = 0.135Ω
3
6
4 |
 International Rectifier |
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| 14 | IRF7501PBF | Power MOSFET ( Transistor ) PD - 95345A
IRF7501PbF
HEXFET® Power MOSFET
l l l l l l l l
Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Lead-Free
S1 G1 S2 G2
1 2 3 4
8 7
D1 D1 D2 D2
VDSS =20V RDS(on) = 0.135Ω
6 |
International Rectifier |
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| 13 | IRF7503 | Power MOSFET(Vdss=30V/ Rds(on)=0.135ohm) PD - 9.1266G
IRF7503
HEXFET® Power MOSFET
l l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching
S1 G1 S2 G2
1
8 7
D1 D1 D2 D2
2
VDSS = 30V RDS(on) = 0.135Ω
3
6
4
5
Descr |
International Rectifier |
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