Datasheet IRF7342PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF7342PBF	Power MOSFET ( Transistor ) PD - 95200 IRF7342PbF Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -55V RDS(on) = 0.105Ω 6	International Rectifier

IRF7342 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF7342	Power MOSFET ( Transistor ) PD -91859 IRF7342 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -55V RDS(on) = 0.105Ω	International Rectifier
IRF7342TRPBF-1	Power MOSFET ( Transistor ) VDS RDS(on) max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) -55 0.105 26 -3.4 V Ω nC A IRF7342TRPbF-1 HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techni	International Rectifier
IRF7342PBF	Power MOSFET ( Transistor ) PD - 95200 IRF7342PbF Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -55V R	International Rectifier

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