Datasheet IRF7341QPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF7341QPBF	Power MOSFET ( Transistor ) Benefits • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allowed up to Tjmax • ÿLead-Free Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing tech	International Rectifier

IRF7341Q Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF7341Q	HEXFET Power MOSFET PD - 94391B IRF7341Q Typical Applications • Anti-lock Braking Systems (ABS) • Electronic Fuel Injection • Air bag HEXFET® Power MOSFET VDSS 55V RDS(on) max 0.050@VGS = 10V 0.065@VGS = 4.5V ID 5.1A 4.42A Benefits • • • • • • Advanced Process Technology Dua	International Rectifier
IRF7341QPbF	Power MOSFET ( Transistor ) Benefits • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allowed up to Tjmax • ÿLead-Free Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the las	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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