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Datasheet IRF7341Q Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRF7341Q | HEXFET Power MOSFET PD - 94391B
IRF7341Q
Typical Applications
• Anti-lock Braking Systems (ABS) • Electronic Fuel Injection • Air bag
HEXFET® Power MOSFET VDSS
55V
RDS(on) max
0.050@VGS = 10V 0.065@VGS = 4.5V
ID
5.1A 4.42A
Benefits
• • • • • •
Advanced Process Technology Dual N-Channel MOSFET U |
 International Rectifier |
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| 1 | IRF7341QPbF | Power MOSFET ( Transistor ) Benefits • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allowed up to Tjmax • ÿLead-Free
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing tech |
International Rectifier |
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