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Datasheet IRF734 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 16 | IRF734 | Power MOSFET ( Transistor ) Power MOSFET
IRF734, SiHF734
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
450 VGS = 10 V
45 6.6 24 Single
1.2
TO-220
D
G
S D G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES • Dynamic dV/dt Rating • Re |
 Vishay |
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| 15 | IRF7341 | HEXFET Power MOSFET PD -91703
IRF7341
HEXFET® Power MOSFET
Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
l l
S1 G1 S2 G2
1 8
D1 D1 D2 D2
2
7
VDSS = 55V RDS(on) = 0.050Ω
3
6
4
5
Top V ie |
 International Rectifier |
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| 14 | IRF7341GPBF | Power MOSFET ( Transistor ) IRF7341GPbF
• Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ Repetitive Avalanche Allowed up to Tjmax • ÿLead-Free • ÿHalogen-Free
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the |
International Rectifier |
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| 13 | IRF7341PBF | HEXFET Power MOSFET PD -95199
IRF7341PbF
Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description
l
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 3 4 8 7
D1 D1 D2 D2
VDSS = 55V RDS(on) = 0.050Ω
6 5 |
International Rectifier |
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