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Datasheet IRF7324 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
5 IRF7324   Power MOSFET ( Transistor )

PD -93799A IRF7324 HEXFET® Power MOSFET q q q q q q Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.1mm) Available in Tape & Reel 2.5V Rated S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -20V RDS(on) = 0.018Ω 3 6 4 5 Description New trench HEXFET® Power MOS
International Rectifier
International Rectifier
datasheet IRF7324 pdf
4 IRF7324D1   FETKY MOSFET / Schottky Diode

PD- 91789 PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint IRF7324D1 8 FETKY™ MOSFET / Schottky Diode l l l l A A S G 1 K K D D 2 7 VDSS = -20V RDS(on) = 0.18Ω Schottky Vf = 0.39
International Rectifier
International Rectifier
datasheet IRF7324D1 pdf
3 IRF7324D1PbF   FETKY MOSFET / Schottky Diode

PD-95309A IRF7324D1PbF FETKYä MOSFET / Schottky Diode l Co-packaged HEXFET® Power MOSFET and Schottky Diode l Ideal for Mobile Phone Applications l Generation V Technology l SO-8 Footprint l Lead-Free A1 A2 S3 G4 8K 7K 6D 5D Description Top View The FETKYTM family of co-packaged HEXFETs an
International Rectifier
International Rectifier
datasheet IRF7324D1PbF pdf
2 IRF7324PBF   HEXFET Power MOSFET

PD - 95460 IRF7324PbF HEXFET® Power MOSFET Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Low Profile (<1.1mm) ● Available in Tape & Reel ● 2.5V Rated ● Lead-Free ● ● S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -20V RDS(on) = 0.018Ω 6
International Rectifier
International Rectifier
datasheet IRF7324PBF pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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