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Datasheet IRF7324 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | IRF7324 | Power MOSFET ( Transistor ) PD -93799A
IRF7324
HEXFET® Power MOSFET
q q q q q q
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.1mm) Available in Tape & Reel 2.5V Rated
S1 G1 S2 G2
1
8
D1 D1 D2 D2
2
7
VDSS = -20V RDS(on) = 0.018Ω
3
6
4
5
Description
New trench HEXFET® Power MOS |
International Rectifier |
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4 | IRF7324D1 | FETKY MOSFET / Schottky Diode
PD- 91789
PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint
IRF7324D1
8
FETKY™ MOSFET / Schottky Diode
l l l l
A A S G
1
K K D D
2
7
VDSS = -20V RDS(on) = 0.18Ω Schottky Vf = 0.39 |
International Rectifier |
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3 | IRF7324D1PbF | FETKY MOSFET / Schottky Diode PD-95309A
IRF7324D1PbF
FETKYä MOSFET / Schottky Diode
l Co-packaged HEXFET® Power MOSFET and Schottky Diode
l Ideal for Mobile Phone Applications l Generation V Technology l SO-8 Footprint l Lead-Free
A1 A2 S3 G4
8K 7K 6D 5D
Description
Top View
The FETKYTM family of co-packaged HEXFETs an |
International Rectifier |
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2 | IRF7324PBF | HEXFET Power MOSFET
PD - 95460
IRF7324PbF
HEXFET® Power MOSFET
Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Low Profile (<1.1mm) ● Available in Tape & Reel ● 2.5V Rated ● Lead-Free
● ●
S1 G1 S2 G2
1 2 3 4
8 7
D1 D1 D2 D2
VDSS = -20V RDS(on) = 0.018Ω
6 |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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