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Datasheet IRF7316 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRF7316 | HEXFET POWER MOSFET PD - 9.1505B
IRF7316
l l l l l
Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 3 4 8 7
D1 D1 D2 D2
VDSS = -30V RDS(on) = 0.058Ω
6 5
Fifth Generation HEXFETs from International Rectifier utilize a |
 International Rectifier |
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| 1 | IRF7316QPBF | Power MOSFET ( Transistor ) l Advanced Process Technology l Ultra Low On-Resistance l Dual P- Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low o |
International Rectifier |
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