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Datasheet IRF7314 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRF7314 | HEXFET Power MOSFET PD - 9.1436B
PRELIMINARY
l l l l l
IRF7314
HEXFET® Power MOSFET
8 7
Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated
S1 G1 S2 G2
1
D1 D1 D2 D2
2
VDSS = -20V RDS(on) = 0.058Ω
3
6
4
5
T op V iew
Description
Fifth Generation HEXF |
 International Rectifier |
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| 3 | IRF7314PBF | Power MOSFET ( Transistor ) PD - 95181
IRF7314PbF
l l l l l l
Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 3 4 8 7
D1 D1 D2 D2
VDSS = -20V RDS(on) = 0.058Ω
6 5
Fifth Generation HEXFETs from International Rectif |
International Rectifier |
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| 2 | IRF7314Q | Power MOSFET ( Transistor ) PD -93945A
IRF7314Q
HEXFET® Power MOSFET
Typical Applications • Anti-lock Braking Systems (ABS) • Electronic Fuel Injection • Air bag Benefits • Advanced Process Technology • Dual P-Channel MOSFET • Ultra Low On-Resistance • 175°C Operating Temperature • Repetitive Avalanche Allow |
International Rectifier |
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| 1 | IRF7314QPBF | Power MOSFET ( Transistor ) PD - 96107A
IRF7314QPbF
Benefits • Advanced Process Technology • ÿDual P-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allowed up to Tjmax • ÿLead-Free Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize th |
International Rectifier |
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