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Datasheet IRF731 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 18 | IRF731 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF731
DESCRIPTION ·Drain Current –ID=5.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 350V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.0Ω(Max) ·Fast Switching Speed
APPLICATIONS ·Designed especially f |
 Inchange Semiconductor |
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| 17 | IRF731 | N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
 Fairchild Semiconductor |
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| 16 | IRF731 | Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC |
 New Jersey Semiconductor |
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| 15 | IRF7311 | HEXFET Power MOSFET PD - 91435C
IRF7311
HEXFET® Power MOSFET
l l l l l
Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated
S1 G1 S2 G2
1
8 7
D1 D1 D2 D2
2
VDSS = 20V RDS(on) = 0.029Ω
3
6
4
5
T o p V ie w
Description
Fifth Generation HEXFETs from Int |
 International Rectifier |
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