Datasheet IRF730F1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF730F1	Trans MOSFET N-CH 20V 5.2A 8-Pin SOIC T/R	New Jersey Semiconductor

IRF73 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF730	PowerMOS transistor Avalanche energy rated Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance g IRF730 SYMBOL d QUICK REFERENCE DATA VDSS = 400 V ID = 7.2 A R	NXP Semiconductors
IRF730	N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET ® IRF730 N - CHANNEL 400V - 0.75 Ω - 5.5A - TO-220 PowerMESH™ MOSFET TYPE IRF730 s s s s s V DSS 400 V R DS(on) < 1Ω ID 5.5 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCR	STMicroelectronics
IRF7389	HEXFET Power MOSFET PD - 91645A IRF7389 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 D1 D2 D2 N-Ch VDSS 30V P-Ch -30V 2 7 3 6 4 5 P-CHANNEL MOSFET RDS(o	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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