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Datasheet IRF7304 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRF7304 | Generation V Technology Previous Datasheet
Index
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PD - 9.1240B
PRELIMINARY
IRF7304
1 8
HEXFET® Power MOSFET
Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description
Fifth Generation HEXFETs from Internat |
 International Rectifier |
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| 2 | IRF7304PBF | HEXFET Power MOSFET IRF7304PbF
HEXFET® Power MOSFET
l l l l l l l l
PD - 95038
Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free
S1 G1 S2 G2
1 2 3 4
8 7
D1 D1 D2 D2
VDSS = -20V RDS(on) = 0.090Ω
6 5
Top V |
International Rectifier |
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| 1 | IRF7304QPBF | Power MOSFET ( Transistor ) PD - 96104A
IRF7304QPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free
S1 G1 S2 G2
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processin |
International Rectifier |
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