|
|
Datasheet IRF720 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
22 | IRF720 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF720
·DESCRITION ·Designed especially for high voltage,high speed applications,
such as off-l |
Inchange Semiconductor |
|
21 | IRF720 | N-CHANNEL POWER MOSFETS |
Samsung semiconductor |
|
20 | IRF720 | 3.3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET IRF720
Data Sheet July 1999 File Number
1579.4
3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
Intersil Corporation |
|
19 | IRF720 | TRANSISTORS N-CHANNEL |
International Rectifier |
Esta página es del resultado de búsqueda del IRF720. Si pulsa el resultado de búsqueda de IRF720 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |