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Datasheet IRF7105 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | IRF7105 | EVALUATION KIT LXE1710 EVALUATION BOARD
USER GUIDE
A
M I C R O S E M I
C O M P A N Y
Copyright © 2000 Rev. 1.1, 2000-12-01
Microsemi
Linfinity Microelectronics Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2 |
Microsemi Corporation |
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4 | IRF7105 | Power MOSFET ( Transistor ) l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest poss |
International Rectifier |
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3 | IRF7105PBF | Power MOSFET ( Transistor ) l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the |
International Rectifier |
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2 | IRF7105QPBF | Power MOSFET ( Transistor ) END OF LIFE
PD - 96102B
IRF7105QPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free
S1 G1 S2 G2
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize th |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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