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Datasheet IRF7103 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRF7103 | Power MOSFET(Vdss=50V/ Rds(on)=0.130ohm/ Id=3.0A) PD - 9.1095B
IRF7103
HEXFET® Power MOSFET
l l l l l l l
Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
S1 G1 S2 G2
1
8
D1 D1 D2 D2
2
7
VDSS = 50V RDS(on) = 0.130Ω ID = 3.0A
3
6
4
5
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 International Rectifier |
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| 3 | IRF7103PBF | HEXFET Power MOSFET IRF7103PbF
l l l l l l l l
PD -95037A
Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 8 7
D1 D1 D2 D2
VDSS = 50V RDS(on) = 0.130Ω ID = 3.0A
3 |
International Rectifier |
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| 2 | IRF7103Q | Power MOSFET(Vdss=50V) PD - 93944C
AUTOMOTIVE MOSFET
Typical Applications
q q q
IRF7103Q
HEXFET® Power MOSFET
Anti-lock Braking Systems (ABS) Electronic Fuel Injection Power Doors, Windows & Seats Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanch |
International Rectifier |
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| 1 | IRF7103QPbF | Power MOSFET ( Transistor ) PD - 96101C
IRF7103QPbF
Benefits l Advanced Process Technology l Dual N-Channel MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
This HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techn |
International Rectifier |
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