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Datasheet IRF640S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | IRF640S | N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET ®
IRF640S
N - CHANNEL 200V - 0.150Ω - 18A TO-263 MESH OVERLAY ™ MOSFET
TYPE IRF640S
s s s s
V DSS 200 V
R DS(on) < 0.18 Ω
ID 18 A
TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 1
DESCRIPTION This power MOSFET is desig |
STMicroelectronics |
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3 | IRF640S | Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A) PD -90902B
IRF640S/L
HEXFET® Power MOSFET
l l l l l l l
Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 200V RDS(on) = 0.18Ω
G S
ID = 18A
Descriptio |
International Rectifier |
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2 | IRF640S | N-channel TrenchMOS transistor Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF640, IRF640S
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 200 V ID = 16 A
g
RDS(ON) ≤ 180 mΩ
s
GENERAL |
NXP Semiconductors |
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1 | IRF640S | Power MOSFET ( Transistor ) www.vishay.com
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
70 13 39 Single
0.18
I2PAK (TO-262)
D2PAK (TO-26
D
G
DS G
D S
G
S N-Channel MOSFET
FEATURES
• Surface |
Vishay |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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