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Datasheet IRF640S Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 IRF640S   N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET

® IRF640S N - CHANNEL 200V - 0.150Ω - 18A TO-263 MESH OVERLAY ™ MOSFET TYPE IRF640S s s s s V DSS 200 V R DS(on) < 0.18 Ω ID 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 DESCRIPTION This power MOSFET is desig
STMicroelectronics
STMicroelectronics
datasheet IRF640S pdf
3 IRF640S   Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A)

PD -90902B IRF640S/L HEXFET® Power MOSFET l l l l l l l Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18Ω G S ID = 18A Descriptio
International Rectifier
International Rectifier
datasheet IRF640S pdf
2 IRF640S   N-channel TrenchMOS transistor

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 16 A g RDS(ON) ≤ 180 mΩ s GENERAL
NXP Semiconductors
NXP Semiconductors
datasheet IRF640S pdf
1 IRF640S   Power MOSFET ( Transistor )

www.vishay.com IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 70 13 39 Single 0.18 I2PAK (TO-262) D2PAK (TO-26 D G DS G D S G S N-Channel MOSFET FEATURES • Surface
Vishay
Vishay
datasheet IRF640S pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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