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Datasheet IRF640N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRF640N | Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to ac |
 International Rectifier |
 |
| 5 | IRF640NL | Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to ac |
International Rectifier |
|
| 4 | IRF640NLPBF | Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements
Dl esLceraidp-tFiorene
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
techn |
International Rectifier |
|
| 3 | IRF640NPBF | Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements
Dl esLceraidp-tFiorene
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
techn |
International Rectifier |
|
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