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Datasheet IRF6215 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRF6215 | HEXFET Power MOSFET PD - 91479B
IRF6215
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -150V
G S
RDS(on) = 0.29Ω ID = -13A
Fifth Generation HEXFETs from International Rectifier uti |
 International Rectifier |
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| 5 | IRF6215L | (IRF6215L/S) HEXFET Power MOSFET
PD - 91643
IRF6215S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF6215S) l Low-profile through-hole (IRF6215L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -150V RDS(on) = 0.29Ω
G
ID = |
International Rectifier |
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| 4 | IRF6215LPBF | Power MOSFET ( Transistor ) • Lead-Free
PD - 95132
IRF6215S/LPbF
www.irf.com
1 4/21/05
IRF6215S/LPbF
2 www.irf.com
IRF6215S/LPbF
www.irf.com
3
IRF6215S/LPbF
4 www.irf.com
IRF6215S/LPbF
www.irf.com
5
IRF6215S/LPbF
6 www.irf.com
IRF6215S/LPbF
www.irf.com
7
IRF6215S/LPbF
D2Pak Package Outline
D2Pak Part Marking |
International Rectifier |
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| 3 | IRF6215PBF | Power MOSFET ( Transistor )
PD - 94817
IRF6215PbF
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre |
International Rectifier |
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