|
|
Datasheet IRF614S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | IRF614S | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRF614S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 1.393Ω (Typ.)
Absolute Maximum Ra |
Fairchild Semiconductor |
|
2 | IRF614S | Power MOSFET ( Transistor ) Power MOSFET
IRF614S, SiHF614S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
8.2 1.8 4.5 Single
D2PAK (TO-263)
D
2.0
GD S
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
|
Vishay |
|
1 | IRF614SPBF | HEXFET Power MOSFET PD-95984
IRF614SPbF
Lead-Free
www.irf.com
1
12/21/04
IRF614SPbF
2
www.irf.com
IRF614SPbF
www.irf.com
3
IRF614SPbF
4
www.irf.com
IRF614SPbF
www.irf.com
5
IRF614SPbF
www.DataSh |
International Rectifier |
Esta página es del resultado de búsqueda del IRF614S. Si pulsa el resultado de búsqueda de IRF614S se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |