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Datasheet IRF610L Equivalent ( PDF )

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1 IRF610L   Power MOSFET ( Transistor )

www.vishay.com IRF610S, SiHF610S, IRF610L, SiHF610L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 8.2 1.8 4.5 Single 1.5 I2PAK (TO-262) D2PAK (TO-263) D G DS G D S G S N-Channel MOSFET FEATURES • Sur
 Vishay
Vishay		 datasheet IRF610L pdf

IRF6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRF630A

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requir
 Inchange Semiconductor
Inchange Semiconductor		 datasheet pdf - Inchange Semiconductor
IRF630

200V/9A POWER MOSFET

200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 200V/9A Power MOSFET (N-Channel) General Description • IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage, high speed power switching applications
 TAITRON
TAITRON		 datasheet pdf - TAITRON
IRF640

200V N-Channel MOSFET

IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of e
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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