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Datasheet IRF610 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | IRF610 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF610
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
·DESCRITION ·Designed especially for high voltage,high speed applications,
such as off- |
 Inchange Semiconductor |
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| 13 | IRF610 | 3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET IRF610
Data Sheet June 1999 File Number
1576.3
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
 Intersil Corporation |
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| 12 | IRF610 | N-Channel Power MOSFETs/ 3.5A/ 150-200V |
 Fairchild Semiconductor |
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| 11 | IRF610 | Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB |
 New Jersey Semiconductor |
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