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Datasheet IRF5806 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | IRF5806 | Power MOSFET(Vdss=-20V) PD - 93997
IRF5806
HEXFET® Power MOSFET
q q q q
Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available in Tape & Reel
VDSS
-20V
RDS(on) max
86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V
ID
-4.0A -3.0A
Description
New trench HEXFET® Power MOSFETs from International Rectifier utilize ad |
International Rectifier |
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1 | IRF5806PbF | Power MOSFET ( Transistor ) PD - 95476B
IRF5806PbF
l l l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free
HEXFET® Power MOSFET VDSS
-20V
RDS(on) max
86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V
ID
-4.0A -3.0A
Description
These P-channel MOSFETs from |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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