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Datasheet IRF5801 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | IRF5801 | Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A) PD-94044
SMPS MOSFET
Applications l High frequency DC-DC converters
IRF5801
HEXFET® Power MOSFET
VDSS
200V
RDS(on) max
2.2Ω
ID
0.6A
Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN10 |
International Rectifier |
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2 | IRF5801PbF | Power MOSFET ( Transistor ) PD-95474B
SMPS MOSFET
Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free l H |
International Rectifier |
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1 | IRF5801PBF-1 | Power MOSFET ( Transistor ) VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
200 2.20 3.9 0.6
V Ω nC A
Features Industry-standard pinout TSOP-6 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
IRF5801PbF-1
HEXFET® Power MOSFET
D1 D2 G3
6D 5D |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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