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Datasheet IRF530NS Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | IRF530NS | Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) PD - 91352A
IRF530NS/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS =100V
G S
RDS(on) = 0.11Ω ID = 17A
Description
Fifth Generation HEXFETs f |
International Rectifier |
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3 | IRF530NS | HEXFET Power MOSFET PD - 91352B
HEXFET Power MOSFET
l l l l l l
IRF530NS IRF530NL ®
VDSS = 100V RDS(on) = 90mΩ
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
G S
ID = 17A
Description
Advanced HEXFET® Power MOSFETs f |
International Rectifier |
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2 | IRF530NS | Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
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1 | IRF530NSPBF | HEXFET Power MOSFET PD - 95100
HEXFET Power MOSFET
Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
IRF530NSPbF IRF530NLPbF ®
VDSS = 100V RDS(on) = 90mΩ
D
G S
ID = 17A
Advanced HEXFET® |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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