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Datasheet IRF530NPBF Equivalent ( PDF )

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1 IRF530NPBF   HEXFET Power MOSFET

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free G Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
International Rectifier
International Rectifier
datasheet IRF530NPBF pdf

IRF530N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRF530N

Power MOSFET ( Transistor )

Data Sheet January 2002 IRF530N 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Symbol DRAIN (FLANGE) IRF530N D G S Features • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensat
Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf - Fairchild Semiconductor
IRF530N

N-channel TrenchMOS transistor

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF530N FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(ON) ≤ 110 m�
NXP Semiconductors
NXP Semiconductors
datasheet pdf - NXP Semiconductors
IRF530N

22A/ 100V/ 0.064 Ohm/ N-Channel Power MOSFET

IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER
Intersil Corporation
Intersil Corporation
datasheet pdf - Intersil Corporation


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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