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Datasheet IRF5210 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRF5210 | Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A) PD - 91434A
IRF5210
HEXFET® Power MOSFET
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
D
VDSS = -100V RDS(on) = 0.06Ω
G
ID = -40A
S
Description
Fifth Generation HEXFETs from |
 International Rectifier |
 |
| 5 | IRF5210L | Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A) PD - 91405C
IRF5210S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -100V RDS(on) = 0.06Ω
G
ID = -40A
S
Fifth Gener |
International Rectifier |
|
| 4 | IRF5210LPBF | HEXFET Power MOSFET PD - 97049A
IRF5210SPbF IRF5210LPbF
HEXFET® Power MOSFET
l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free
D
VDSS = -100V RDS( |
International Rectifier |
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| 3 | IRF5210S | Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A) PD - 91405C
IRF5210S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -100V RDS(on) = 0.06Ω
G
ID = -40A
S
Fifth Gener |
International Rectifier |
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