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Datasheet IRF520L Equivalent ( PDF )

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1 IRF520L   Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=9.7A)

PD -91340A IRF520NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF520NS) Low-profile through-hole (IRF520NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.20Ω G S ID = 9.7A Description Fifth Generation HEXFETs
International Rectifier
International Rectifier
datasheet IRF520L pdf

IRF5 Datasheet ( Hoja de datos ) - resultados coincidentes

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IRF540

Power MOSFET ( Transistor )

IRF540, SiHF540 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 72 11 32 Single D FEATURES 100 0.077 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature •F ast
Vishay
Vishay
datasheet pdf - Vishay
IRF530

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF530 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applic
Inchange Semiconductor
Inchange Semiconductor
datasheet pdf - Inchange Semiconductor
IRF540N

33A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFET

IRF540N TM Data Sheet March 2000 File Number 4842 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER
Intersil Corporation
Intersil Corporation
datasheet pdf - Intersil Corporation


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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