|
|
Datasheet IRF512 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRF512 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF512
·DESCRITION ·Designed especially for high voltage,high speed applications,
such as off-l |
 Inchange Semiconductor |
 |
| 4 | IRF512 | N-Channel Power MOSFETs/ 5.5 A/ 60-100V |
 Fairchild Semiconductor |
|
| 3 | IRF512 | N-Channel Enhancement-Mode Vertical DMOS Power FETs |
 Supertex Inc |
|
| 2 | IRF512 | (IRF510 - IRF513) N-Channel Power MOSFETs
Semiconductor
IRF510, IRF511, IRF512, IRF513
4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed |
 Harris Corporation |
|
| Esta página es del resultado de búsqueda del IRF512. Si pulsa el resultado de búsqueda de IRF512 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1] [2]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |