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Datasheet IRF4905 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | IRF4905 | P-Channel MOSFET Transistor INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
IRF4905
FEATURES ·Advanced Process Technology ·Ultra Low On-Resistance ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·P-Channel ·Fully Avalanche Rated
DESCRIPTION ·This benefit, combined |
 Inchange Semiconductor |
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| 6 | IRF4905 | Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) PD - 9.1280C
IRF4905
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -55V
G S
RDS(on) = 0.02Ω ID = -74A
Fifth Generation HEXFETs from I |
 International Rectifier |
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| 5 | IRF4905L | Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) PD - 9.1478A
IRF4905S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -55V RDS(on) = 0.02Ω
G
ID = -74A
S
Fifth Gener |
International Rectifier |
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| 4 | IRF4905LPBF | HEXFET Power MOSFET PD - 97034
IRF4905SPbF IRF4905LPbF
Features
O O O O O O
HEXFET® Power MOSFET
D
O
Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free
VDSS = -55V RDS(on) = |
International Rectifier |
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