|
|
Datasheet IRF450 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | IRF450 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF450
DESCRIPTION ·13A,500V ·RDS(on)=0.4Ω ·SOA is Power Dissipation Limited ·Linear Transfer Characteristics ·Related Literature
APPLICATIONS ·Designed for applications such as switching regulators,
switching |
 Inchange Semiconductor |
 |
| 7 | IRF450 | N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
|
| 6 | IRF450 | N-CHANNEL POWER MOSFET IRF450
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
1
11.18 (0.440) 10.67 (0.420)
26.67 (1.050) max.
4.09 (0.161) 3.84 (0.151) dia. 2 plcs.
2
VDSS ID(cont) RDS(on)
FEATURES
500V 13A 0.4W
20.32 |
 Seme LAB |
|
| 5 | IRF450 | 13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET IRF450
Data Sheet March 1999 File Number
1827.3
13A, 500V, 0.400 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
 Fairchild Semiconductor |
|
| Esta página es del resultado de búsqueda del IRF450. Si pulsa el resultado de búsqueda de IRF450 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1] [2]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |