Datasheet IRF3710SPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF3710SPBF	Power MOSFET ( Transistor ) IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 23mΩ G ID = 57A S Description Advanced HEXFET® Power MOSFETs	International Rectifier

IRF3710S Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF3710S	Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) PD -91310C IRF3710S/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF3710S) Low-profile through-hole (IRF3710L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.025Ω G Description Fifth Generation	International Rectifier
IRF3710SPBF	Power MOSFET ( Transistor ) IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 23mΩ G ID = 57A S Description Advanced HEX	International Rectifier

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