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Datasheet IRF3710S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRF3710S | Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) PD -91310C
IRF3710S/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRF3710S) Low-profile through-hole (IRF3710L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 100V RDS(on) = 0.025Ω
G
Description
Fifth Generation HEXFETs from Intern |
 International Rectifier |
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| 1 | IRF3710SPBF | Power MOSFET ( Transistor ) IRF3710SPbF IRF3710LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
HEXFET® Power MOSFET D VDSS = 100V
RDS(on) = 23mΩ
G
ID = 57A
S
Description
Advanced HEXFET® Power MOSFETs |
International Rectifier |
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