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Datasheet IRF330 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | IRF330 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF330
DESCRIPTION ·Drain Current ID=5.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.0Ω(Max) ·Fast Switching Speed
APPLICATIONS ·High voltage,high speed |
 Inchange Semiconductor |
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| 9 | IRF330 | N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
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| 8 | IRF330 | 5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET IRF330
Data Sheet March 1999 File Number
1570.4
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
 Intersil Corporation |
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| 7 | IRF330 | TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=1.00ohm/ Id=5.5A) PD - 90335F
IRF330 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6760 HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 400V, N-CHANNEL
Product Summary
Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A
The HEXFETtechnology is the key to International Rectif |
 International Rectifier |
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