Datasheet IRF250SMD Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF250SMD	N.CHANNEL POWER MOSFET IRF250SMD MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 3 0 .7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(o	Seme LAB

IRF250 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF250	N-CHANNEL POWER MOSFETS	Samsung semiconductor
IRF250	N-CHANNEL POWER MOSFET IRF250 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.	Seme LAB
IRF250	30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET IRF250 Data Sheet March 1999 File Number 1825.3 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is designed, tested and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode o	Intersil Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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