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Datasheet IRF240 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
8 | IRF240 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF240
DESCRIPTION ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.18Ω(Max)
APPLICATIONS ·Switching power supplies ·Switching converters, |
Inchange Semiconductor |
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7 | IRF240 | N-CHANNEL POWER MOSFET |
Samsung semiconductor |
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6 | IRF240 | N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS IRF240
MECHANICAL DATA Dimensions in mm (inches)
40.01 (1.575) Max.
26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls.
N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS
VDSS ID(cont) RDS(on) 200V 18A 0.18W
22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 |
Seme LAB |
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5 | IRF240 | 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFET IRF240
Data Sheet March 1999 File Number
1584.3
18A, 200V, 0.180 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
Intersil Corporation |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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