|
|
Datasheet IRF230 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | IRF230 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF230
DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.40Ω(Max) ·High Power, High Speed Applications
APPLICATIONS ·Switching |
 Inchange Semiconductor |
 |
| 8 | IRF230 | N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
|
| 7 | IRF230 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET IRF230
TO–3 (TO–204AA) Package Outline.
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
22.23 (0.875) max.
38.61 (1.52) 39.12 (1.54)
29.9 (1.177) 30.4 (1.19 |
 Seme LAB |
|
| 6 | IRF230 | 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs Semiconductor
IRF230, IRF231, IRF232, IRF233
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci� |
 Intersil Corporation |
|
| Esta página es del resultado de búsqueda del IRF230. Si pulsa el resultado de búsqueda de IRF230 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |